2N708

SKU: 2N708

2N708 is a silicon NPN saturated-switch transistor in a TO-18 through-hole package. It is intended for saturated switching applications and is specified at 15 V, 50 mA and 360 mW.

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£9.59 Inc. VAT (£7.99 Ex. VAT)

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Datasheet

2N708 Datasheet

2N708 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO18
Manufacturer	Central Semiconductor
Vbr CBO	40
Vbr CEO	15
Max. PD (W)	360m
C(ob) (F)	6.0p
Derate (Amb) (W/°C)	2.1m
hfe	3.0
Icbo Max. @Vcb Max. (A)	25n
Polarity	NPN
@VCE (test) (V)	10
Oper. Temp (°C) Max.	200
@Ic (A)	10m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.36 W
Maximum Collector-Base Voltage \|Vcb\|	40 V
Maximum Collector-Emitter Voltage \|Vce\|	15 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.2 A
Max. Operating Junction Temperature (Tj)	200 °C
Collector Capacitance (Cc)	8 pF
Transition Frequency (ft):	300 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SKU	86469

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