| Weight |
0.01 kg
|
| Equivalent |
2N711B |
| Type |
Transistor Germanium PNP |
| Case |
TO18 |
| Manufacturer |
Motorola Semiconductor |
| Vbr CBO |
12 |
| Vbr CEO |
12 |
| Max. PD (W) |
150m |
| C(ob) (F) |
7.5p |
| Derate (Amb) (W/°C) |
2.0m |
| hfe |
20 |
| Ic Max. (A) |
100m |
| Icbo Max. @Vcb Max. (A) |
3.0u |
| Polarity |
PNP |
| @VCE (test) (V) |
.50 |
| Oper. Temp (°C) Max. |
100 |
| @Ic (A) |
10m |
| Pinout Equivalence Number |
3-12 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.15 W |
| Maximum Collector-Base Voltage |Vcb| |
12 V |
| Maximum Collector-Emitter Voltage |Vce| |
7 V |
| Maximum Emitter-Base Voltage |Veb| |
1 V |
| Maximum Collector Current |Ic max| |
0.05 A |
| Max. Operating Junction Temperature (Tj) |
100 °C |
| Collector Capacitance (Cc) |
9 pF |
| Transition Frequency (ft): |
150 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
20 |
| SKU |
85679 |