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2N717
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2N717

SKU: 2N717
2N717 Transistor Silicon NPN CASE: TO18 MAKE: Motorola Semiconductor
Datasheet
2N717 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO18
Manufacturer Motorola Semiconductor
Vbr CBO 60
Vbr CEO 40
Max. PD (W) 400m
C(ob) (F) 35p
Derate (Amb) (W/°C) 10m
hfe 2.0
Icbo Max. @Vcb Max. (A) 1.0u
Polarity NPN
@VCE (test) (V) 10
Oper. Temp (°C) Max. 175
@Ic (A) 50m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.4 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 28 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 35 pF
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 115179
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