2N751

2N751

SKU: 2N751
2N751 Transistor Silicon NPN CASE: U8 MAKE: Raytheon Semiconductor
Product specifications
Type Transistor Silicon NPN
Case U8
Manufacturer Raytheon Semiconductor
Vbr CBO 20
Vbr CEO 20
Max. PD (W) 200m
C(ob) (F) 10p
Derate (Amb) (W/°C) 1.3m
hfe 2.2
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 800n
Polarity NPN
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 175
@Ic (A) 1.0m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.02 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 770779
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