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2N755
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2N755

SKU: 2N755
2N755 Transistor Silicon NPN CASE: TO18 MAKE: USA Make
Product specifications
Type Transistor Silicon NPN
Case TO18
Manufacturer USA Make
Vbr CBO 100
Vbr CEO 80
Max. PD (W) 300m
C(ob) (F) 10p
Derate (Amb) (W/°C) 3.0m
hfe 1.5
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 1.0u
Polarity NPN
@VCE (test) (V) 10
Oper. Temp (°C) Max. 175
@Ic (A) 10m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 3 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 10 pF
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 606193
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