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2N768
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2N768

SKU: 2N768
2N768 Transistor Germanium PNP CASE: TO18 MAKE: USA Make
Product specifications
Type Transistor Germanium PNP
Case TO18
Manufacturer USA Make
Vbr CBO 12
Vbr CEO 10
Max. PD (W) 35m
C(ob) (F) 14p
Derate (Amb) (W/°C) 467m
hfe 4.0
Ic Max. (A) 100m
Polarity PNP
@VCE (test) (V) 3.0
Oper. Temp (°C) Max. 100
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.035 W
Maximum Collector-Base Voltage |Vcb| 12 V
Maximum Collector-Emitter Voltage |Vce| 10 V
Maximum Emitter-Base Voltage |Veb| 1 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 100 °C
Collector Capacitance (Cc) 3 pF
Transition Frequency (ft): 125 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SKU 770760
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