The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N791
View detailed images (1)

2N791

SKU: 2N791
2N791 Transistor Silicon NPN CASE: U8 MAKE: Raytheon Semiconductor
Product specifications
Type Transistor Silicon NPN
Case U8
Manufacturer Raytheon Semiconductor
Vbr CBO 45
Vbr CEO 30
Max. PD (W) 150m
C(ob) (F) 10p
Derate (Amb) (W/°C) 1.0
hfe 18
Ic Max. (A) 25m
Icbo Max. @Vcb Max. (A) 2.0u
Polarity NPN
Trans. Freq (Hz) Min. 8.0M
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 175
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 45 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 3 V
Maximum Collector Current |Ic max| 0.025 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN 18
SKU 770742
Back