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2N808
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2N808

SKU: 2N808
2N808 Transistor Germanium PNP CASE: U9 MAKE: Raytheon Semiconductor
Product specifications
Type Transistor Germanium PNP
Case U9
Manufacturer Raytheon Semiconductor
Vbr CBO 25
Vbr CEO 14
Max. PD (W) 70m
Derate (Amb) (W/°C) 850m
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 5.0u
Polarity PNP
Trans. Freq (Hz) Min. 14M
Oper. Temp (°C) Max. 850
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.075 W
Maximum Collector-Base Voltage |Vcb| 25 V
Maximum Collector-Emitter Voltage |Vce| 14 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 85 °C
Transition Frequency (ft): 14 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 770725
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