2N810

SKU: 2N810

2N810 Transistor Germanium PNP CASE: U9 MAKE: Raytheon Semiconductor

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	U9
Manufacturer	Raytheon Semiconductor
Vbr CBO	30
Vbr CEO	15
Max. PD (W)	75m
C(ob) (F)	20p
Derate (Amb) (W/°C)	1.2m
hfe	30
Ic Max. (A)	200m
Icbo Max. @Vcb Max. (A)	5.0u
Polarity	PNP
Trans. Freq (Hz) Min.	3.0M
@VCE (test) (V)	6.0
Oper. Temp (°C) Max.	85
@Ic (A)	1.0m
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.075 W
Maximum Collector-Base Voltage \|Vcb\|	30 V
Maximum Collector-Emitter Voltage \|Vce\|	15 V
Maximum Collector Current \|Ic max\|	0.2 A
Max. Operating Junction Temperature (Tj)	85 °C
Transition Frequency (ft):	3 MHz
Forward Current Transfer Ratio (hFE), MIN	25
SKU	770722

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