2N813

SKU: 2N813

2N813 Transistor Germanium PNP CASE: U8 MAKE: Raytheon Semiconductor

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	U8
Manufacturer	Raytheon Semiconductor
Vbr CBO	30
Vbr CEO	10
Max. PD (W)	75m
C(ob) (F)	20p
Derate (Amb) (W/°C)	1.2m
hfe	70
Ic Max. (A)	200m
Icbo Max. @Vcb Max. (A)	5.0u
Polarity	PNP
Trans. Freq (Hz) Min.	15M
@VCE (test) (V)	6.0
Oper. Temp (°C) Max.	85
@Ic (A)	1.0m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.075 W
Maximum Collector-Base Voltage \|Vcb\|	30 V
Maximum Collector-Emitter Voltage \|Vce\|	10 V
Maximum Collector Current \|Ic max\|	0.2 A
Max. Operating Junction Temperature (Tj)	85 °C
Transition Frequency (ft):	15 MHz
Forward Current Transfer Ratio (hFE), MIN	55
SKU	770719

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