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2N814
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2N814

SKU: 2N814
2N814 Transistor Germanium PNP CASE: U9 MAKE: Raytheon Semiconductor
Product specifications
Type Transistor Germanium PNP
Case U9
Manufacturer Raytheon Semiconductor
Vbr CBO 30
Vbr CEO 10
Max. PD (W) 75m
C(ob) (F) 20p
Derate (Amb) (W/°C) 1.2m
hfe 70
Ic Max. (A) 200m
Icbo Max. @Vcb Max. (A) 5.0u
Polarity PNP
Trans. Freq (Hz) Min. 15M
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 85
@Ic (A) 1.0m
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.075 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 10 V
Maximum Collector Current |Ic max| 0.2 A
Max. Operating Junction Temperature (Tj) 85 °C
Transition Frequency (ft): 15 MHz
Forward Current Transfer Ratio (hFE), MIN 55
SKU 770718
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