2N815

SKU: 2N815

2N815 Transistor Germanium NPN CASE: U8 MAKE: Raytheon Semiconductor

Product specifications

Weight	0.01 kg
Type	Transistor Germanium NPN
Case	U8
Manufacturer	Raytheon Semiconductor
Vbr CBO	25
Vbr CEO	15
Max. PD (W)	75m
C(ob) (F)	20p
Derate (Amb) (W/°C)	1.3m
Ic Max. (A)	200m
Icbo Max. @Vcb Max. (A)	5.0u
Polarity	NPN
Oper. Temp (°C) Max.	85
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.075 W
Maximum Collector-Base Voltage \|Vcb\|	25 V
Maximum Collector-Emitter Voltage \|Vce\|	15 V
Maximum Collector Current \|Ic max\|	0.2 A
Max. Operating Junction Temperature (Tj)	85 °C
Transition Frequency (ft):	5 MHz
Forward Current Transfer Ratio (hFE), MIN	60
SKU	770717

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