2N817

SKU: 2N817

2N817 Transistor Germanium NPN CASE: U8 MAKE: Raytheon Semiconductor

Product specifications

Weight	0.01 kg
Type	Transistor Germanium NPN
Case	U8
Manufacturer	Raytheon Semiconductor
Vbr CBO	30
Vbr CEO	15
Max. PD (W)	75m
C(ob) (F)	20p
Derate (Amb) (W/°C)	1.2m
Ic Max. (A)	400m
Icbo Max. @Vcb Max. (A)	10u
Polarity	NPN
Oper. Temp (°C) Max.	100
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.075 W
Maximum Collector-Base Voltage \|Vcb\|	30 V
Maximum Collector-Emitter Voltage \|Vce\|	15 V
Maximum Collector Current \|Ic max\|	0.4 A
Max. Operating Junction Temperature (Tj)	85 °C
Transition Frequency (ft):	2.5 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	770715

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