The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N818
View detailed images (1)

2N818

SKU: 2N818
2N818 Transistor Germanium NPN CASE: U9 MAKE: Raytheon Semiconductor
Product specifications
Type Transistor Germanium NPN
Case U9
Manufacturer Raytheon Semiconductor
Vbr CBO 30
Vbr CEO 15
Max. PD (W) 75m
C(ob) (F) 20p
Derate (Amb) (W/°C) 1.2m
Ic Max. (A) 400m
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
Oper. Temp (°C) Max. 100
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.075 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 15 V
Maximum Collector Current |Ic max| 0.4 A
Max. Operating Junction Temperature (Tj) 85 °C
Transition Frequency (ft): 2.5 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 770714
Back