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2N820
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2N820

SKU: 2N820
2N820 Transistor Germanium NPN CASE: U9 MAKE: Raytheon Semiconductor
Product specifications
Type Transistor Germanium NPN
Case U9
Manufacturer Raytheon Semiconductor
Vbr CBO 30
Vbr CEO 20
Max. PD (W) 75m
C(ob) (F) 20p
Derate (Amb) (W/°C) 1.2m
Ic Max. (A) 400m
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
Oper. Temp (°C) Max. 100
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.075 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Collector Current |Ic max| 0.4 A
Max. Operating Junction Temperature (Tj) 85 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 770711
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