2N823

SKU: 2N823

2N823 Transistor Germanium NPN CASE: U8 MAKE: Raytheon Semiconductor

Product specifications

Weight	0.01 kg
Type	Transistor Germanium NPN
Case	U8
Manufacturer	Raytheon Semiconductor
Vbr CBO	25
Vbr CEO	12
Max. PD (W)	75m
C(ob) (F)	20p
Derate (Amb) (W/°C)	1.2m
Ic Max. (A)	100m
Icbo Max. @Vcb Max. (A)	5.0u
Polarity	NPN
Trans. Freq (Hz) Min.	4.0M
Oper. Temp (°C) Max.	85
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.075 W
Maximum Collector-Base Voltage \|Vcb\|	25 V
Maximum Collector-Emitter Voltage \|Vce\|	12 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	85 °C
Transition Frequency (ft):	4 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SKU	770708

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