2N824

SKU: 2N824

2N824 Transistor Germanium NPN CASE: U9 MAKE: Raytheon Semiconductor

Product specifications

Weight	0.01 kg
Type	Transistor Germanium NPN
Case	U9
Manufacturer	Raytheon Semiconductor
Vbr CBO	30
Vbr CEO	18
Max. PD (W)	70m
C(ob) (F)	18p
Derate (Amb) (W/°C)	1.2m
Ic Max. (A)	200m
Icbo Max. @Vcb Max. (A)	5.0u
Polarity	NPN
Trans. Freq (Hz) Min.	2.0M
Oper. Temp (°C) Max.	85
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.075 W
Maximum Collector-Base Voltage \|Vcb\|	30 V
Maximum Collector-Emitter Voltage \|Vce\|	18 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	85 °C
Transition Frequency (ft):	4 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SKU	770707

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