The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N827

2N827

SKU: 2N827
2N827 Transistor Germanium PNP CASE: TO18 MAKE: Generic
Product specifications
Type Transistor Germanium PNP
Case TO18
Manufacturer Generic
Vbr CBO 20
Vbr CEO 20
Max. PD (W) 150m
C(ob) (F) 9.0p
Derate (Amb) (W/°C) 2.0m
hfe 2.5
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 5.0u
Polarity PNP
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 100
@Ic (A) 10m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 15 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 100 °C
Collector Capacitance (Cc) 7 pF
Transition Frequency (ft): 125 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SKU 770704
Back