2N837
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2N837

SKU: 2N837
2N837 Transistor Germanium PNP CASE: TO18 MAKE: USA Make
Product specifications
Type Transistor Germanium PNP
Case TO18
Manufacturer USA Make
Vbr CBO 12
Vbr CEO 6.0
Max. PD (W) 150m
C(ob) (F) 9.0p
Derate (Amb) (W/°C) 2.0m
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 3.0u
Polarity PNP
Oper. Temp (°C) Max. 100
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 12 V
Maximum Collector-Emitter Voltage |Vce| 6 V
Maximum Emitter-Base Voltage |Veb| 1 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 100 °C
Collector Capacitance (Cc) 9 pF
Transition Frequency (ft): 300 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SKU 606196
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