The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N838
View detailed images (4)

2N838

SKU: 2N838
2N838 Transistor Germanium PNP CASE: TO18 MAKE: Generic
Product specifications
Type Transistor Germanium PNP
Case TO18
Manufacturer Generic
Vbr CBO 30
Vbr CEO 30
Max. PD (W) 150m
C(ob) (F) 4.0p
Derate (Amb) (W/°C) 2.0m
hfe 3.0
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 10u
Polarity PNP
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 100
@Ic (A) 10m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 15 V
Maximum Emitter-Base Voltage |Veb| 2 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 100 °C
Collector Capacitance (Cc) 9 pF
Transition Frequency (ft): 300 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SKU 770696
Back