The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N847

2N847

SKU: 2N847
2N847 Transistor Silicon NPN CASE: TO18 MAKE: Raytheon Semiconductor
Product specifications
Type Transistor Silicon NPN
Case TO18
Manufacturer Raytheon Semiconductor
Vbr CBO 40
Vbr CEO 25
Max. PD (W) 200m
Derate (Amb) (W/°C) 750u
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Oper. Temp (°C) Max. 175
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 15 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 600 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 565147
Back