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2N867
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2N867

SKU: 2N867
2N867 Transistor Silicon NPN CASE: TO18 MAKE: Semiconductor Technology
Product specifications
Type Transistor Silicon NPN
Case TO18
Manufacturer Semiconductor Technology
Vbr CBO 30
Vbr CEO 20
Max. PD (W) 500m
C(ob) (F) 45p
Derate (Amb) (W/°C) 3.3m
hfe 2.5
Ic Max. (A) 600m
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
@VCE (test) (V) 10
Oper. Temp (°C) Max. 200
@Ic (A) 50m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.05 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Collector Current |Ic max| 0.3 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 573227
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