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2N907
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2N907

SKU: 2N907
2N907 Transistor Silicon NPN CASE: U10 MAKE: Raytheon Semiconductor
Product specifications
Type Transistor Silicon NPN
Case U10
Manufacturer Raytheon Semiconductor
Vbr CBO 45
Vbr CEO 30
Max. PD (W) 150m
C(ob) (F) 3.0p
Derate (Amb) (W/°C) 1.0m
hfe 5.0
Ic Max. (A) 20m
Icbo Max. @Vcb Max. (A) 1.0u
Polarity NPN
Trans. Freq (Hz) Min. 10M
@VCE (test) (V) 20
Oper. Temp (°C) Max. 175
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 45 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Collector Current |Ic max| 0.02 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 25 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 770644
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