Weight |
0.01 kg
|
Type |
Transistor Silicon NPN |
Manufacturer |
Dayton |
Case |
TO18 |
Vbr CBO |
80 |
Vbr CEO |
80 |
Max. PD (W) |
500m |
C(ob) (F) |
5.0p |
Derate (Amb) (W/°C) |
2.8m |
hfe |
36 |
Ic Max. (A) |
100m |
Icbo Max. @Vcb Max. (A) |
1.0u |
Polarity |
NPN |
Trans. Freq (Hz) Min. |
50M |
@VCE (test) (V) |
5.0i |
Oper. Temp (°C) Max. |
175 |
@Ic (A) |
1.0m |
Pinout Equivalence Number |
3-12 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
0.5 W |
Maximum Collector-Base Voltage |Vcb| |
80 V |
Maximum Collector-Emitter Voltage |Vce| |
80 V |
Maximum Emitter-Base Voltage |Veb| |
8 V |
Maximum Collector Current |Ic max| |
0.1 A |
Max. Operating Junction Temperature (Tj) |
175 °C |
Collector Capacitance (Cc) |
5 pF |
Transition Frequency (ft): |
50 MHz |
Forward Current Transfer Ratio (hFE), MIN |
36 |
SKU |
313262 |