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2N998
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2N998

SKU: 2N998
2N998 Transistor Silicon NPN CASE: TO72-3 MAKE: Generic
Datasheet
2N998 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO72-3
Manufacturer New Jersey Semiconductor
Vbr CEO 20
Max. PD (W) 300m
Min hFE 2.0k
@Ic (test) (A) 50m
Icbo Max. @Vcb Max. (A) 5.0u
Polarity NPN
Derate Above 25°C 2.6m
@VCE (test) 10
Oper. Temp (°C) Max. 135
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 15 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 30 pF
Forward Current Transfer Ratio (hFE), MIN 1600
SKU 368785
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