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2S306
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2S306

SKU: 2S306
2S306 Transistor Silicon PNP CASE: TO5 MAKE: Texas Instruments
Product specifications
Type Transistor Silicon PNP
Case TO5
Manufacturer Texas Instruments
Vbr CBO 6.0
Vbr CEO 6.0
Max. PD (W) 100m
C(ob) (F) 22p
Derate (Amb) (W/°C) 571u
hfe 80
Ic Max. (A) 10m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 1.5M
@VCE (test) (V) 3.0
Oper. Temp (°C) Max. 175
@Ic (A) 1.0m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.05 W
Maximum Collector-Base Voltage |Vcb| 6 V
Maximum Collector-Emitter Voltage |Vce| 6 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.01 A
Max. Operating Junction Temperature (Tj) 165 °C
Collector Capacitance (Cc) 65 pF
Transition Frequency (ft): 0.75 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 582888
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