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2S321
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2S321

SKU: 2S321
2S321 Transistor Silicon PNP CASE: TO1 MAKE: Texas Instruments
Product specifications
Type Transistor Silicon PNP
Case TO1
Manufacturer Texas Instruments
Vbr CBO 80
Vbr CEO 80
Max. PD (W) 300m
C(ob) (F) 40p
Derate (Amb) (W/°C) 2.4m
hfe 15
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 10u
Polarity PNP
Trans. Freq (Hz) Min. 1.0M
@VCE (test) (V) 6.0i
Oper. Temp (°C) Max. 200
@Ic (A) 1.0m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 30 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 65 pF
Transition Frequency (ft): 0.35 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 368814
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