The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2S512

2S512

SKU: 2S512
2S512 Transistor Silicon NPN CASE: TO18 MAKE: Texas Instruments
Product specifications
Type Transistor Silicon NPN
Case TO18
Manufacturer Texas Instruments
Vbr CBO 25
Vbr CEO 12
Max. PD (W) 300m
C(ob) (F) 6p
Derate (Amb) (W/°C) 2.0m
hfe 50
Icbo Max. @Vcb Max. (A) .50u
Polarity NPN
Trans. Freq (Hz) Min. 250M
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 175
@Ic (A) 10m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 25 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.2 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 368822
Back