2SA1001

SKU: 2SA1001

2SA1001 Transistor Silicon PNP CASE: TO3 MAKE: Fujitsu

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO3
Manufacturer	Fujitsu
Vbr CBO	130
Vbr CEO	130
Max. PD (W)	80
Derate (Amb) (W/°C)	640m
Max. hFE	200
Min hFE	50
Ic Max. (A)	8.0
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	50u
Polarity	PNP
R(sat) (Û)	400m
Trans. Freq (Hz) Min.	40M
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	80 W
Maximum Collector-Base Voltage \|Vcb\|	130 V
Maximum Collector-Emitter Voltage \|Vce\|	130 V
Maximum Emitter-Base Voltage \|Veb\|	4 V
Maximum Collector Current \|Ic max\|	8 A
Max. Operating Junction Temperature (Tj)	125 °C
Collector Capacitance (Cc)	350 pF
Transition Frequency (ft):	40 MHz
Forward Current Transfer Ratio (hFE), MIN	50
SKU	540271

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