2SA1002

SKU: 2SA1002

2SA1002 Transistor Silicon PNP CASE: TO3 MAKE: Fujitsu

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO3
Manufacturer	Fujitsu
Vbr CBO	120
Vbr CEO	120
Max. PD (W)	120
Derate (Amb) (W/°C)	960m
Max. hFE	200
Min hFE	50
Ic Max. (A)	12
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	50u
Polarity	PNP
R(sat) (Û)	400m
Trans. Freq (Hz) Min.	40M
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	120 W
Maximum Collector-Base Voltage \|Vcb\|	120 V
Maximum Collector-Emitter Voltage \|Vce\|	120 V
Maximum Emitter-Base Voltage \|Veb\|	4 V
Maximum Collector Current \|Ic max\|	12 A
Max. Operating Junction Temperature (Tj)	125 °C
Collector Capacitance (Cc)	450 pF
Transition Frequency (ft):	40 MHz
Forward Current Transfer Ratio (hFE), MIN	50
SKU	540272

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