2SA1021

SKU: 2SA1021

2SA1021 Transistor Silicon PNP CASE: TO126 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO126
Manufacturer	Toshiba
Vbr CBO	150
Vbr CEO	150
Max. PD (W)	20
Derate (Amb) (W/°C)	160m
Max. hFE	320
Min hFE	60
Ic Max. (A)	1.5
@Ic (test) (A)	200m
Icbo Max. @Vcb Max. (A)	1.0u
Polarity	PNP
Trans. Freq (Hz) Min.	20M
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	20 W
Maximum Collector-Base Voltage \|Vcb\|	150 V
Maximum Collector-Emitter Voltage \|Vce\|	150 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	1.5 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	35 pF
Transition Frequency (ft):	15 MHz
Forward Current Transfer Ratio (hFE), MIN	60
SKU	116296

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