2SA1022

SKU: 2SA1022

2SA1022 Transistor Silicon PNP CASE: SOT23 MAKE: Matsushita Electronics

Datasheet

2SA1022 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	SOT23
Manufacturer	Matsushita Electronics
Vbr CBO	30
Vbr CEO	20
Max. PD (W)	200m
hfe	50
Ic Max. (A)	30m
Icbo Max. @Vcb Max. (A)	100n
Polarity	PNP
Trans. Freq (Hz) Min.	150M
@VCE (test) (V)	10i
Oper. Temp (°C) Max.	125
@Ic (A)	1.0m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	0.2 W
Maximum Collector-Base Voltage \|Vcb\|	30 V
Maximum Collector-Emitter Voltage \|Vce\|	20 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.03 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	1.2 pF
Transition Frequency (ft):	150 MHz
Forward Current Transfer Ratio (hFE), MIN	50
SKU	342879

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