2SA1035

SKU: 2SA1035

2SA1035 Transistor Silicon PNP CASE: TO236 MAKE: Matsushita Electronics

Datasheet

2SA1035 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO236
Manufacturer	Matsushita Electronics
Vbr CBO	55
Vbr CEO	55
Max. PD (W)	200m
hfe	180
Ic Max. (A)	50m
Icbo Max. @Vcb Max. (A)	100n
Polarity	PNP
@VCE (test) (V)	5.0i
Oper. Temp (°C) Max.	125
@Ic (A)	2.0m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	0.2 W
Maximum Collector-Base Voltage \|Vcb\|	55 V
Maximum Collector-Emitter Voltage \|Vce\|	55 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.05 A
Max. Operating Junction Temperature (Tj)	175 °C
Collector Capacitance (Cc)	3.3 pF
Transition Frequency (ft):	280 MHz
Forward Current Transfer Ratio (hFE), MIN	180
SKU	770393

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