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2SA1052D
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2SA1052D

SKU: 2SA1052D
2SA1052D Transistor Silicon PNP CASE: TO236 MAKE: Hitachi
Product specifications
Type Transistor Silicon PNP
Case TO236
Manufacturer Hitachi
Vbr CBO 30
Vbr CEO 30
Max. PD (W) 150m
Derate (Amb) (W/°C) 1.5m
hfe 500=
Ic Max. (A) 100m
Polarity PNP
@VCE (test) (V) 12
Oper. Temp (°C) Max. 125
@Ic (A) 2.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 135 °C
Collector Capacitance (Cc) 3.3 pF
Transition Frequency (ft): 280 MHz
Forward Current Transfer Ratio (hFE), MIN 250
SKU 770352
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