| Weight |
0.01 kg
|
| Type |
Transistor Silicon PNP |
| Case |
SOT100 |
| Manufacturer |
NEC |
| Vbr CBO |
20 |
| Vbr CEO |
12 |
| Max. PD (W) |
300m |
| C(ob) (F) |
1p |
| t(on) Delay (S) |
1.3n- |
| Derate (Amb) (W/°C) |
1.7m |
| t(f) Max. (S) |
0.9n |
| hfe |
20 |
| Ic Max. (A) |
50m |
| Icbo Max. @Vcb Max. (A) |
100n |
| Polarity |
PNP |
| Tr Max. (s) |
0.7n- |
| t(stor) Max. (S) |
0.9n- |
| Trans. Freq (Hz) Min. |
4G |
| @VCE (test) (V) |
10 |
| Oper. Temp (°C) Max. |
175 |
| @Ic (A) |
15m |
| Pinout Equivalence Number |
4-29 |
| Surface Mounted Yes/No |
YES |
| Maximum Collector Power Dissipation (Pc) |
0.1 W |
| Maximum Collector-Base Voltage |Vcb| |
20 V |
| Maximum Collector-Emitter Voltage |Vce| |
20 V |
| Maximum Collector Current |Ic max| |
0.05 A |
| Max. Operating Junction Temperature (Tj) |
175 °C |
| Transition Frequency (ft): |
4000 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
80 |
| SKU |
556808 |