The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SA1060
View detailed images (12)

2SA1060

SKU: 2SA1060
2SA1060 Transistor Silicon PNP CASE: TO3P MAKE: Matsushita Electronics
Datasheet
2SA1060 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO3P
Manufacturer Matsushita Electronics
Vbr CBO 80
Vbr CEO 80
Max. PD (W) 60
Derate (Amb) (W/°C) 480m
Max. hFE 200
Min hFE 40
Ic Max. (A) 5.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 50u
Polarity PNP
Trans. Freq (Hz) Min. 15M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 60 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 125 °C
Transition Frequency (ft): 15 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 116300
Back