2SA1061

SKU: 2SA1061

2SA1061 Transistor Silicon PNP CASE: TO3P MAKE: Matsushita Electronics

Datasheet

2SA1061 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO3P
Manufacturer	Matsushita Electronics
Vbr CBO	100
Vbr CEO	100
Max. PD (W)	70
Derate (Amb) (W/°C)	660m
Max. hFE	200
Min hFE	40
Ic Max. (A)	6.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	50u
Polarity	PNP
Trans. Freq (Hz) Min.	15M
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	70 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	100 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	6 A
Max. Operating Junction Temperature (Tj)	125 °C
Transition Frequency (ft):	15 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	116301

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