2SA1063

2SA1063

SKU: 2SA1063
2SA1063 Transistor Silicon PNP CASE: TO3 MAKE: Matsushita Electronics
Product specifications
Type Transistor Silicon PNP
Case TO3
Manufacturer Matsushita Electronics
Vbr CBO 150
Vbr CEO 120
Max. PD (W) 80
Max. hFE 280
Min hFE 40
Ic Max. (A) 6.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 1.0m
Polarity PNP
Trans. Freq (Hz) Min. 50M
Oper. Temp (°C) Max. 140
@VCE (V) 5
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 80 W
Maximum Collector-Base Voltage |Vcb| 150 V
Maximum Collector-Emitter Voltage |Vce| 150 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 6 A
Max. Operating Junction Temperature (Tj) 125 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 116303
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