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2SA1076
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2SA1076

SKU: 2SA1076
2SA1076 Transistor Silicon PNP CASE: MT200 MAKE: Fuji Semiconductor
Datasheet
2SA1076 Datasheet
Product specifications
Type Transistor Silicon PNP
Case MT200
Manufacturer Fuji Semiconductor
Vbr CBO 160
Vbr CEO 160
Max. PD (W) 120
Derate (Amb) (W/°C) 960m
Max. hFE 200
Min hFE 60
Ic Max. (A) 12
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 50u
Polarity PNP
R(sat) (Û) 360m
Trans. Freq (Hz) Min. 60M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 120 W
Maximum Collector-Base Voltage |Vcb| 160 V
Maximum Collector-Emitter Voltage |Vce| 160 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 12 A
Max. Operating Junction Temperature (Tj) 135 °C
Collector Capacitance (Cc) 300 pF
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 342894
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