| Weight |
0.01 kg
|
| Equivalent |
2SA1085E |
| Type |
Transistor |
| Case |
TO92L |
| Manufacturer |
Hitachi |
| Vbr CBO |
120 |
| Vbr CEO |
120 |
| Max. PD (W) |
400m |
| C(ob) (F) |
3.5p |
| Derate (Amb) (W/°C) |
4.0m |
| hfe |
250 |
| Ic Max. (A) |
100m |
| Icbo Max. @Vcb Max. (A) |
100n |
| Polarity |
PNP |
| Trans. Freq (Hz) Min. |
90M |
| @VCE (test) (V) |
12 |
| Oper. Temp (°C) Max. |
150 |
| @Ic (A) |
2.0m |
| Pinout Equivalence Number |
3-10 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.4 W |
| Maximum Collector-Base Voltage |Vcb| |
120 V |
| Maximum Collector-Emitter Voltage |Vce| |
120 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
0.1 A |
| Max. Operating Junction Temperature (Tj) |
175 °C |
| Collector Capacitance (Cc) |
3.5 pF |
| Transition Frequency (ft): |
90 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
250 |
| SKU |
116315 |