2SA1093

SKU: 2SA1093

2SA1093 Transistor Silicon PNP CASE: TO218 MAKE: Toshiba

Datasheet

2SA1093 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO218
Manufacturer	Toshiba
Vbr CBO	120
Vbr CEO	120
Max. PD (W)	80
Derate (Amb) (W/°C)	640m
Max. hFE	240
Min hFE	55
Ic Max. (A)	8.0
@Ic (test) (A)	-1
Icbo Max. @Vcb Max. (A)	50u
Polarity	PNP
Trans. Freq (Hz) Min.	90M
Oper. Temp (°C) Max.	140
@VCE (V)	-5
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	80 W
Maximum Collector-Base Voltage \|Vcb\|	120 V
Maximum Collector-Emitter Voltage \|Vce\|	120 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	8 A
Max. Operating Junction Temperature (Tj)	125 °C
Collector Capacitance (Cc)	150 pF
Transition Frequency (ft):	90 MHz
Forward Current Transfer Ratio (hFE), MIN	120
SKU	342899

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