2SA1100
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2SA1100

SKU: 2SA1100
2SA1100 Transistor Silicon PNP CASE: TO92 MAKE: Mitsubishi
Product specifications
Type Transistor Silicon PNP
Case TO92
Manufacturer Mitsubishi
Vbr CBO 50
Vbr CEO 50
Max. PD (W) 300m
C(ob) (F) 7.0p
hfe 500=
Ic Max. (A) 200m
Icbo Max. @Vcb Max. (A) 1.0n
Polarity PNP
Trans. Freq (Hz) Min. 200M
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 125
@Ic (A) 1.0m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 0.2 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 4 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SKU 552150
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