2SA1121

SKU: 2SA1121

2SA1121 Transistor Silicon PNP CASE: TO236 MAKE: Hitachi

Datasheet

2SA1121 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO236
Manufacturer	Hitachi
Vbr CEO	35
Max. PD (W)	150m
hfe	60
Ic Max. (A)	100m
Polarity	PNP
@VCE (test) (V)	12
@Ic (A)	10m
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	0.15 W
Maximum Collector-Base Voltage \|Vcb\|	35 V
Maximum Emitter-Base Voltage \|Veb\|	4 V
Maximum Collector Current \|Ic max\|	0.5 A
Max. Operating Junction Temperature (Tj)	125 °C
Collector Capacitance (Cc)	7 pF
Transition Frequency (ft):	50 MHz
Forward Current Transfer Ratio (hFE), MIN	60
SMD Transistor Code	SB_SC_SD
SKU	342900

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