2SA1122

SKU: 2SA1122

2SA1122 Transistor Silicon PNP CASE: TO236 MAKE: Hitachi

Datasheet

2SA1122 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO236
Manufacturer	Hitachi
Vbr CEO	55
Max. PD (W)	150m
hfe	160
Ic Max. (A)	100m
Polarity	PNP
@VCE (test) (V)	12
@Ic (A)	2.0m
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	0.15 W
Maximum Collector-Base Voltage \|Vcb\|	55 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	125 °C
Forward Current Transfer Ratio (hFE), MIN	160
SMD Transistor Code	CC_CD_CE
SKU	342901

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