| Weight |
0.01 kg
|
| Type |
Transistor Silicon PNP |
| Case |
TO126 |
| Manufacturer |
NEC |
| Vbr CBO |
180 |
| Vbr CEO |
180 |
| Max. PD (W) |
8.0 |
| Max. hFE |
400 |
| Min hFE |
100 |
| Ic Max. (A) |
100m |
| @Ic (test) (A) |
10m |
| Polarity |
PNP |
| Trans. Freq (Hz) Min. |
180M |
| Oper. Temp (°C) Max. |
150 |
| @VCE (V) |
5.0 |
| Pinout Equivalence Number |
3-10 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
8 W |
| Maximum Collector-Base Voltage |Vcb| |
180 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
0.1 A |
| Max. Operating Junction Temperature (Tj) |
135 °C |
| Collector Capacitance (Cc) |
5.8 pF |
| Transition Frequency (ft): |
160 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
200 |
| SKU |
86197 |