| Weight |
0.01 kg
|
| Type |
Transistor Silicon PNP |
| Case |
TO126 |
| Manufacturer |
Toshiba |
| Vbr CBO |
150 |
| Vbr CEO |
150 |
| Max. PD (W) |
10 |
| Derate (Amb) (W/°C) |
80m |
| Max. hFE |
240 |
| Min hFE |
80 |
| Ic Max. (A) |
50m |
| @Ic (test) (A) |
-10m |
| Icbo Max. @Vcb Max. (A) |
100n |
| Polarity |
PNP |
| Trans. Freq (Hz) Min. |
200M |
| Oper. Temp (°C) Max. |
140 |
| @VCE (V) |
-5 |
| Pinout Equivalence Number |
3-10 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
10 W |
| Maximum Collector-Base Voltage |Vcb| |
150 V |
| Maximum Collector-Emitter Voltage |Vce| |
150 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
0.05 A |
| Max. Operating Junction Temperature (Tj) |
175 °C |
| Collector Capacitance (Cc) |
2.5 pF |
| Transition Frequency (ft): |
200 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
150 |
| SKU |
342902 |