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2SA1160B
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2SA1160B

SKU: 2SA1160B
2SA1160B Transistor Silicon PNP CASE: TO92L MAKE: Toshiba
Product specifications
Type Transistor Silicon PNP
Case TO92L
Manufacturer Toshiba
Vbr CBO 20
Vbr CEO 10
Max. PD (W) 900m
C(ob) (F) 50p
hfe 400=
Ic Max. (A) 2.0
Polarity PNP
Trans. Freq (Hz) Min. 140M
@VCE (test) (V) 1.0
@Ic (A) 500m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.9 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 60 pF
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 200
SKU 770280
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