The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SA1160C

2SA1160C

SKU: 2SA1160C
2SA1160C Transistor Silicon PNP CASE: TO92 MAKE: Toshiba
Price:
£4.79 Inc. VAT (£3.99 Ex. VAT)
£4.79 Inc. VAT (£3.99 Ex. VAT)
Qty
Product specifications
Equivalent 2SA1160
Type Transistor Silicon PNP
Case TO92
Manufacturer Toshiba
Vbr CBO 20
Vbr CEO 10
Max. PD (W) 900m
C(ob) (F) 50p
hfe 600=
Max. hFE 600
Min hFE 140
Ic Max. (A) 2.0
@Ic (test) (A) -.5
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 140M
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 140
@VCE (V) -1
@Ic (A) 500m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.9 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 60 pF
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 300
SKU 770279
Back