| Equivalent | 2SA1180A | |
| Type | Transistor Silicon PNP | |
| Case | TO3 | |
| Manufacturer | Fujitsu | |
| Vbr CBO | 180 | |
| Vbr CEO | 180 | |
| Max. PD (W) | 100 | |
| Derate (Amb) (W/°C) | 667m | |
| t(f) Max. (S) | 200n | |
| Max. hFE | 40 | |
| Min hFE | 10 | |
| Ic Max. (A) | 10 | |
| @Ic (test) (A) | 5.0 | |
| Icbo Max. @Vcb Max. (A) | 50m | |
| Polarity | PNP | |
| Tr Max. (s) | 300n | |
| R(sat) (Û) | 200m | |
| Oper. Temp (°C) Max. | 175 | |
| @VCE (V) | 1.0 | |
| Pinout Equivalence Number | 3-14 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 80 W | |
| Maximum Collector-Base Voltage |Vcb| | 150 V | |
| Maximum Collector-Emitter Voltage |Vce| | 150 V | |
| Maximum Emitter-Base Voltage |Veb| | 5 V | |
| Maximum Collector Current |Ic max| | 15 A | |
| Max. Operating Junction Temperature (Tj) | 175 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 60 | |
| SKU | 116329 | |