2SA1185

SKU: 2SA1185

2SA1185 Transistor Silicon PNP CASE: TO218 MAKE: Matsushita Electronics

Datasheet

2SA1185 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO218
Manufacturer	Matsushita Electronics
Vbr CBO	50
Vbr CEO	50
Max. PD (W)	60
Derate (Amb) (W/°C)	480m
Max. hFE	320
Min hFE	60
Ic Max. (A)	7.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	1.0m
Polarity	PNP
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	60 W
Maximum Collector-Base Voltage \|Vcb\|	50 V
Maximum Collector-Emitter Voltage \|Vce\|	50 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	5 A
Max. Operating Junction Temperature (Tj)	125 °C
Collector Capacitance (Cc)	250 pF
Transition Frequency (ft):	100 MHz
Forward Current Transfer Ratio (hFE), MIN	60
SKU	116331

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